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Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5121629
Abstract: Dopant diffusion and structural defects are investigated in a carbon-phosphorus implanted silicon. End-of-range defects maturation and phosphorus diffusion are inhibited. A direct imaging of carbon segregation to dislocation loops is given by atom probe tomography.…
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Keywords:
implanted silicon;
carbon;
phosphorus;
carbon segregation ... See more keywords
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Published in 2019 at "International Journal of Nanoscience"
DOI: 10.1142/s0219581x19500194
Abstract: Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimu...
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Keywords:
arsenide implanted;
implanted silicon;
intersubband absorption;
gallium arsenide ... See more keywords
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Published in 2020 at "Science of Sintering"
DOI: 10.2298/sos2002207m
Abstract: Low energy Ag ions were implanted into silicon and annealed at different temperatures in order to generate plasmonic active silicon hybrids. It was found that as the ion fluence of irradiation was increased, a monotonic…
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Keywords:
thermal annealing;
relationship structural;
annealing implanted;
silicon relationship ... See more keywords