3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs
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DOI: 10.1109/ted.2019.2912457
Abstract: 3-D numerical technology computer-aided design simulations, based on experimental results, are performed to study the origin of the large Z2-FET dynamic random access memory (DRAM) memory cell-to-cell variability on fully depleted silicon-on-insulator (FD-SOI) technology. The… read more here.
Keywords: tcad study; implications channel; study implications; width interface ... See more keywords