Techniques to Improve Write and Retention Reliability of STT-MRAM Memory Subsystem
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DOI: 10.1109/tcad.2021.3118210
Abstract: Spin transfer torque magneto-resistive random-access memory (STT-MRAM) has many advantages, such as scalability, persistence, practically infinite endurance, and fast access speed, that make it a promising and emerging technology for memory. However, this technology has… read more here.
Keywords: stt mram; improve write; reliability; memory ... See more keywords