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Improved capacitive memory of Er:TiO2 TF based MOS device

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1 Published in 2019 at "Journal of Alloys and Compounds"

DOI: 10.1016/j.jallcom.2019.04.040

Abstract: Abstract Improved memory performance of Er:TiO2 thin film (TF) device as compared to the undoped TiO2 TF device is discussed. Capacitance–voltage (C-V) and conductance-voltage (G-V) analysis were performed for various high frequencies ranging from 300 KHz… read more here.

Keywords: voltage; improved capacitive; tio2; capacitive memory ... See more keywords