An Improved Small-Signal Equivalent Circuit Model Considering Channel Current Magnetic Effect
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DOI: 10.1109/lmwc.2018.2850895
Abstract: In this letter, the channel current magnetic effect of complementary metal–oxide–semiconductor (CMOS) transistors is studied, and an improved small-signal equivalent circuit model (SSECM) is proposed. Silicon-on-insulator (SOI) CMOS transistors were fabricated and measured in a… read more here.
Keywords: magnetic effect; improved small; current magnetic; channel current ... See more keywords