Improvement of NbO x -based threshold switching devices by implementing multilayer stacks
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DOI: 10.1088/1361-6641/ab1da3
Abstract: In this work the I–V characteristics of a niobium oxide-based threshold switching device were optimized to match the requirements for its application in neuromorphic circuits. Those neuromorphic circuits rely on coupled oscillators utilizing the volatile… read more here.
Keywords: threshold switching; switching devices; improvement nbo; based threshold ... See more keywords