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Published in 2018 at "Radiation Effects and Defects in Solids"
DOI: 10.1080/10420150.2018.1539733
Abstract: ABSTRACT The EPR g factors g// and gā„ for the tetragonal (CrO4)3ā impurity center in ZrSiO4: Cr5+ crystal are studied from the high-order perturbation formulas based on the two-mechanism (the crystal field and charge-transfer mechanisms)…
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Keywords:
zrsio4 cr5;
factors tetragonal;
center zrsio4;
impurity center ... See more keywords
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Published in 2024 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2023.3336836
Abstract: Donor-like defects are activated and acceptor-like defects are passivated when commercial AlGaN/GaN high electron mobility transistors (HEMTs) are irradiated with 10-keV X-rays or 1.8-MeV protons at low fluence. Displacement-damage-induced creation of acceptor-like defects is observed…
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Keywords:
like defects;
gan hemts;
algan gan;
impurity center ... See more keywords