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Published in 2021 at "Ceramics International"
DOI: 10.1016/j.ceramint.2021.09.095
Abstract: Abstract In this study, the forms of occurrence of impurity elements in silicon carbide (SiC) with different particle sizes were systematically investigated using a combination of X-ray diffraction (XRD), inductively coupled plasma-atomic emission spectrometry (ICP-OES),…
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Keywords:
silicon carbide;
elements silicon;
microscopy;
impurity elements ... See more keywords