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Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector

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Published in 2017 at "Optical and Quantum Electronics"

DOI: 10.1007/s11082-017-0970-2

Abstract: In this paper, the back-illuminated In0.09Ga0.91N p-i-n ultraviolet photodetectors have been fabricated and simulated. The responsivity characteristic was shown experimentally and theoretically. The peak responsivity of photodetector was improved from 0.06 A/W at 394 nm… read more here.

Keywords: photodetector; layer; back illuminated; in0 09ga0 ... See more keywords