Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.08.016
Abstract: Abstract The impact of growth conditions on indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy is reported. A series of lattice-matched InAlN films was systematically grown over a… read more here.
Keywords: in0 17al0; metal polar; lattice matched; 17al0 83n ... See more keywords