Numerical study of high-efficient and high-speed In0.1Ga0.9 N/GaN multiple quantum well photodiodes
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DOI: 10.1007/s10825-021-01728-1
Abstract: This paper presents a numerical simulation study of p-i-n photodiodes based on In0.1Ga0.9 N/GaN multiple quantum wells (MQWs) of 2.5-nm-thick In0.1Ga0.9 N QWs and 12-nm-thick GaN barriers embedded into the intrinsic regions. The device performance is evaluated… read more here.
Keywords: frequency; gan multiple; polarization; quantum ... See more keywords