Simulation study for the current matching optimization in In0.48Ga0.52N/In0.74Ga0.26N dual junction solar cells
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DOI: 10.1016/j.spmi.2019.05.004
Abstract: Abstract In this paper indium gallium nitride (InGaN) is used to design and optimize a dual junction (DJ) solar cell, which is series-connected via a tunnel diode, with a careful analysis of the current matching… read more here.
Keywords: in0 48ga0; 48ga0 52n; current matching; dual junction ... See more keywords