Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618010153
Abstract: Hybrid quantum-confined heterostructures grown by metal-organic vapor-phase epitaxy (MOVPE) via the deposition of In0.4Ga0.6As layers with various nominal thicknesses onto vicinal GaAs substrates are studied by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence spectra… read more here.
Keywords: heterostructures grown; confined heterostructures; 4ga0 6as; quantum confined ... See more keywords
Experimental and Theoretical Examination of the Photosensitivity Spectra of Structures with In0.4Ga0.6As Quantum Well-Dots of the Optical Range (900–1050 nm)
Sign Up to like & getrecommendations! Published in 2020 at "Technical Physics Letters"
DOI: 10.1134/s1063785020030116
Abstract: Solar cells based on a new type of nanostructure (quantum well-dots) have been studied. These quantum well-dots (QWDs) are In0.4Ga0.6As layers with marked composition and thickness modulations. The energies of the observed optical transitions in… read more here.
Keywords: quantum; 4ga0 6as; well dots; in0 4ga0 ... See more keywords