Correlation between Electrical Transport and Nanoscale Strain in InAs/In0.6Ga0.4As Core–Shell Nanowires
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DOI: 10.1021/acs.nanolett.8b01782
Abstract: Free-standing semiconductor nanowires constitute an ideal material system for the direct manipulation of electrical and optical properties by strain engineering. In this study, we present a direct quantitative correlation between electrical conductivity and nanoscale lattice… read more here.
Keywords: electrical transport; 6ga0 4as; correlation electrical; in0 6ga0 ... See more keywords