Articles with "in2se3" as a keyword



Selective Growth of Ferroelectric Ultrathin Nonlayered γ-In2Se3.

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Published in 2025 at "Advanced materials"

DOI: 10.1002/adma.202516548

Abstract: Indium selenide (In2Se3) has received increasing interest due to its diverse polytypes and associated polytype-dependent ferroelectric properties, making it one of the promising platforms guiding the development of ultrathin ferroelectric nanodevices. To date, α-, β-,… read more here.

Keywords: in2se3; ferroelectric ultrathin; growth ferroelectric; selective growth ... See more keywords

Ferroelectric Polarization Coupling Effect in BiFeO3/α-In2Se3 Ferroelectric Field Effect Transistor for Stable Non-volatile Memory.

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Published in 2024 at "Small"

DOI: 10.1002/smll.202409922

Abstract: Ferroelectric field-effect transistors (FeFETs) commonly utilize traditional oxide ferroelectric materials for their strong remanent polarization. Yet, integrating them with the standard complementary metal oxide semiconductor (CMOS) process is challenging due to the need for lattice… read more here.

Keywords: effect; in2se3; ferroelectric field; field effect ... See more keywords

Competing Ferroelectric Polarization and Defect Migration Induced Resistive Switching in β'-In2Se3.

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Published in 2025 at "Nano letters"

DOI: 10.1021/acs.nanolett.4c06314

Abstract: Layered β'-In2Se3 has garnered significant attention due to its intriguing multiferroic properties. Until now, most studies have focused on a material-level understanding, with limited exploration of device-level properties. This work systematically investigates the in-plane resistive… read more here.

Keywords: in2se3; resistive switching; ferroelectric polarization; defect migration ... See more keywords

Spin-Sensitive Epitaxial In2Se3 Tunnel Barrier in In2Se3/Bi2Se3 Topological van der Waals Heterostructure.

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Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.2c08053

Abstract: Current-generated spin arising from spin-momentum locking in topological insulator (TI) surface states has been shown to switch the magnetization of an adjacent ferromagnet (FM) via spin-orbit torque (SOT) with a much higher efficiency than heavy… read more here.

Keywords: in2se3; bi2se3; spin; surface states ... See more keywords

Edge-Based Two-Dimensional α-In2Se3-MoS2 Ferroelectric Field Effect Device.

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Published in 2023 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.3c00590

Abstract: Heterostructures based on two-dimensional materials offer the possibility to achieve synergistic functionalities, which otherwise remain secluded by their individual counterparts. Herein, ferroelectric polarization switching in α-In2Se3 has been utilized to engineer multilevel nonvolatile conduction states… read more here.

Keywords: field effect; two dimensional; in2se3; in2se3 mos2 ... See more keywords

Tunable electronic and spin properties in 2D α-tellurene/α-In2Se3 bilayer ferroelectric heterostructure

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Published in 2025 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/adc278

Abstract: Two-dimensional (2D) van der Waals heterostructures (vdWHs) incorporating ferroelectric properties and Rashba effects hold attractive applications in spintronics. In this work, the 2D α-tellurene and typical piezoelectric α-In2Se3 are selected to form the bilayer α-tellurene/α-In2Se3… read more here.

Keywords: effect; in2se3; heterostructure; spin ... See more keywords

High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In2Se3 nanosheet photodetectors.

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Published in 2020 at "Nanotechnology"

DOI: 10.1088/1361-6528/abac7e

Abstract: Photoconductivities (PCs) with high responsivity in two-dimensional (2D) diindium triselenide (In2Se3) nanostructures with α-phase hexagonal structure were studied. The In2Se3 nanosheet photodetectors fabricated by focused-ion beam technique exhibit broad spectral response with wavelength range from… read more here.

Keywords: responsivity; high responsivity; in2se3 nanosheet; in2se3 ... See more keywords

Phase and polarization modulation in two-dimensional In2Se3 via in situ transmission electron microscopy

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Published in 2022 at "Science Advances"

DOI: 10.1126/sciadv.abo0773

Abstract: Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In2Se3 with bistable out-of-plane ferroelectric (FE) α phase and… read more here.

Keywords: two dimensional; in2se3; microscopy; transmission electron ... See more keywords

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β–In2Se3 Thin Films

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Published in 2023 at "Nanomaterials"

DOI: 10.3390/nano13091533

Abstract: Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In2Se3 has been of particular interest because of its ability to… read more here.

Keywords: band; surface reconstruction; in2se3; thin films ... See more keywords