Bidirectional Polarization-Controlled Nonvolatile Ferroelectric SnS/α-In2Se3 van der Waals Heterojunction for Reconfigurable Logic-in-Memory.
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DOI: 10.1021/acsami.5c16543
Abstract: Logic-in-memory devices have emerged as a promising architecture for next-generation computing due to their ability to efficiently process large volumes of data. This is especially critical because the traditional von Neumann architecture─where processing and memory… read more here.
Keywords: in2se3 van; logic memory; memory; logic ... See more keywords
Ferroelectric Control of Spintronic and Valleytronic Properties in GdIBr/In2Se3 van der Waals Multiferroic Heterostructures.
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DOI: 10.1021/acsami.5c17296
Abstract: Spin and valley degrees of freedom, as carriers of information in next-generation devices, remain a key focus for achieving controllable and nonvolatile electrical modulation. In this work, we design GdIBr/In2Se3 and GdBrI/In2Se3 van der Waals… read more here.
Keywords: in2se3 van; van der; spintronic valleytronic; gdibr in2se3 ... See more keywords