Mapping the Ge/InAl(Ga)As Interfacial Electronic Structure and Strain Relief Mechanism in Germanium Quantum Dots
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DOI: 10.1039/d4tc01587h
Abstract: Tensile strained germanium (ε-Ge) has found significant interest due to its unique properties for emerging optoelectronic devices. High tensile strained Ge materials with superior quality are still being investigated due... read more here.
Keywords: structure strain; inal interfacial; mapping inal; interfacial electronic ... See more keywords