Integration of MoS2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Optical Materials"
DOI: 10.1002/adom.201901039
Abstract: At present, dual‐channel or even multi‐channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS2/InAlAs/InGaAs… read more here.
Keywords: inalas ingaas; mos2 inalas; near infrared; ingaas heterojunction ... See more keywords
Characterization of InP-based pseudomorphic HEMT with T-gate
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DOI: 10.1007/s00542-019-04491-3
Abstract: This paper proposes two structures of InAlAs/InGaAs-based pseudomorphic high electron mobility transistor (PHEMT): one with rectangular-gate and another with T-gate. Both the proposed PHEMTs consist of an In 0.52 Al 0.48 As supply/barrier layer and… read more here.
Keywords: hemt; ingaas based; gate; rectangular gate ... See more keywords
InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
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DOI: 10.1134/s1063785019110075
Abstract: A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs… read more here.
Keywords: higher breakdown; high electron; inalas ingaas; breakdown characteristics ... See more keywords
DC AND RF CHARACTERISTICS FLUCTUATION OF INALAS/INGAAS HEMTS ACCORDING TO THE OPERATING TEMPERATURE VARIATION
Sign Up to like & getrecommendations! Published in 2017 at "International Journal of Geomate"
DOI: 10.21660/2017.34.2659
Abstract: InAlAs/InGaAs high electron mobility transistors (HEMTs) are a type of field effect transistor that can achieve extremely high high-frequency gain owing to quantum effects operating in the channel layer. HEMTs are important components for devices… read more here.
Keywords: high frequency; temperature; ingaas hemts; frequency ... See more keywords