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Published in 2019 at "Applied Physics Express"
DOI: 10.7567/1882-0786/ab017f
Abstract: Utilizing the high efficiency of the localized carrier extraction in the low-dimensional semiconductors within a PN junction, an InP-based InAs/InGaAs/InAlAs interband quantum well infrared photodetector has been investigated. Although the thermal energy is much less…
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Keywords:
photodetector;
inalas interband;
ingaas inalas;
inas ingaas ... See more keywords