Identifying Nanometer-scale Clustering in InAlAsSb Random Alloys Using Atom Probe Tomography
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DOI: 10.1017/s1431927617004251
Abstract: Semiconductor devices with enhanced efficiency, resilience, and/or optimized to specific applications/environments rely increasingly on the incorporation of III-V random alloys that have been engineered to possess certain required optoelectronic properties. When these materials are grown,… read more here.
Keywords: random alloys; nanometer scale; identifying nanometer; scale clustering ... See more keywords