Planar InGaAs Avalanche Photodiode With Multi-Stage InAlAs/InAlGaAs Multiplication Structure
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DOI: 10.1109/jqe.2024.3514814
Abstract: A planar In0.53Ga0.47As avalanche photodiode (APD) with a triple-stage cascaded InAlAs/InAlGaAs multiplication structure is designed and fabricated. Double zinc-diffusion p-n junction is formed to suppress the perimeter premature breakdown. A low dark current of 4.8… read more here.
Keywords: multiplication; avalanche photodiode; inalgaas multiplication; stage ... See more keywords