In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy
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DOI: 10.1002/sia.6857
Abstract: During high‐electron‐mobility transistor elaboration process, a thermal treatment of In0.2Al0.8N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In0.2Al0.8N/GaN heterostructures, annealed at 850°C under O2 partial pressure, present… read more here.
Keywords: ray photoelectron; depth; angle resolved; resolved ray ... See more keywords
High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design
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DOI: 10.1007/s11082-021-02786-2
Abstract: This paper proposes a novel normally-off p-GaN gate InAlN/GaN HEMT to replace p-GaN gate AlGaN/GaN HEMT for improving the device stability, enhancing saturation current, reducing the on-state resistance, improving the cut off frequency and decreasing… read more here.
Keywords: gan gate; inaln; electron; layer ... See more keywords
Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer
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DOI: 10.1016/j.apsusc.2019.144086
Abstract: Abstract InAlN as a functional inorganic material is a promising alternative to the commonly used InGaN in tunnel diodes and optoelectronic devices, due to its tunable wider range of energy bandgap (0.65–6.2 eV), thus empowering utilization… read more here.
Keywords: inaln; sapphire; rich inaln; layer ... See more keywords