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   Articles with "inaln" as a keyword



In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy

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recommendations! Published in 2020 at "Surface and Interface Analysis"

DOI: 10.1002/sia.6857

Abstract: During high‐electron‐mobility transistor elaboration process, a thermal treatment of In0.2Al0.8N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In0.2Al0.8N/GaN heterostructures, annealed at 850°C under O2 partial pressure, present… read more here.

Keywords: ray photoelectron; depth; angle resolved; resolved ray ... See more keywords

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

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recommendations! Published in 2021 at "Optical and Quantum Electronics"

DOI: 10.1007/s11082-021-02786-2

Abstract: This paper proposes a novel normally-off p-GaN gate InAlN/GaN HEMT to replace p-GaN gate AlGaN/GaN HEMT for improving the device stability, enhancing saturation current, reducing the on-state resistance, improving the cut off frequency and decreasing… read more here.

Keywords: gan gate; inaln; electron; layer ... See more keywords

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

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recommendations! Published in 2020 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2019.144086

Abstract: Abstract InAlN as a functional inorganic material is a promising alternative to the commonly used InGaN in tunnel diodes and optoelectronic devices, due to its tunable wider range of energy bandgap (0.65–6.2 eV), thus empowering utilization… read more here.

Keywords: inaln; sapphire; rich inaln; layer ... See more keywords

Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs

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recommendations! Published in 2024 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ad4a2d

Abstract: In this paper, the impact of upper channel layer thickness on the electrical characteristics and hysteresis behavior of double-channel InAlN/GaN HEMTs were investigated. The devices with an upper channel layer thickness of 20 nm exhibit… read more here.

Keywords: layer; double channel; inaln; upper channel ... See more keywords