High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films
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DOI: 10.1063/1.4986311
Abstract: We demonstrate high-performance ultraviolet photodetectors (UV-PDs) based on lattice-matched (LM) InAlN/AlGaN heterostructure field-effect transistors (HFETs) gated by transparent ITO films. Low dark currents of 6.8 × 10−8 and 6.1 × 10−7 A/mm and high photocurrent gains over four and three… read more here.
Keywords: based lattice; inaln algan; performance ultraviolet; ultraviolet photodetectors ... See more keywords