Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale.
Sign Up to like & getrecommendations! Published in 2019 at "Nano letters"
DOI: 10.1021/acs.nanolett.8b04561
Abstract: Low-dimensional narrow-band-gap III-V semiconductors are key building blocks for the next generation of high-performance nanoelectronics, nanophotonics, and quantum devices. Realizing these various applications requires an efficient methodology that enables the material dimensional control during the… read more here.
Keywords: dimension; one dimensional; two dimensional; inas ... See more keywords
Diffusion dynamics controlled colloidal synthesis of highly monodisperse InAs nanocrystals
Sign Up to like & getrecommendations! Published in 2021 at "Nature Communications"
DOI: 10.1038/s41467-021-23259-w
Abstract: Highly monodisperse colloidal InAs quantum dots (QDs) with superior optoelectronic properties are promising candidates for various applications, including infrared photodetectors and photovoltaics. Recently, a synthetic process involving continuous injection has been introduced to synthesize uniformly… read more here.
Keywords: diffusion; diffusion dynamics; inas; size ... See more keywords
Low specific contact resistance between InAs/Ni–InAs evaluated by multi-sidewall TLM
Sign Up to like & getrecommendations! Published in 2023 at "AIP Advances"
DOI: 10.1063/5.0150296
Abstract: The specific contact resistance ρint of the InAs/Ni–InAs interface was evaluated by the multi-sidewall transmission line method (MSTLM), where Ni–InAs was formed by alloying Ni and InAs-on-insulator substrates. The revised test structure for MSTLM has… read more here.
Keywords: inas inas; contact resistance; inas; specific contact ... See more keywords
Vertical Hole Transport and Carrier Localization in InAs /InAs 1 -x Sb x Type-II Superlattice Heterojunction Bipolar Transistors
Sign Up to like & getrecommendations! Published in 2017 at "Physical review applied"
DOI: 10.1103/physrevapplied.7.024016
Abstract: Heterojunction bipolar transistors are used to measure vertical hole transport in narrow-band-gap InAs=InAs1−xSbx type-II superlattices (T2SLs). Vertical hole mobilities (μh) are reported and found to decrease rapidly from 360 cm=Vs at 120 K to approximately… read more here.
Keywords: hole transport; energy; transport; inas ... See more keywords
Scattering mechanisms of highest-mobility InAs /Al x Ga 1 -x Sb quantum wells
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review B"
DOI: 10.1103/physrevb.95.115304
Abstract: We study molecular beam epitaxially grown undoped ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{Sb}$/InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highest mobilities were achieved with ${\mathrm{Al}}_{0.33}{\mathrm{Ga}}_{0.67}\mathrm{Sb}$ buffers and lower barriers and a quantum… read more here.
Keywords: mobility; inas; mathrm; quantum wells ... See more keywords
Long interior carrier lifetime in selective-area InAs nanowires on silicon
Sign Up to like & getrecommendations! Published in 2020 at "Optical Materials Express"
DOI: 10.1364/ome.403531
Abstract: Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior… read more here.
Keywords: inas nanowires; inas; recombination; carrier ... See more keywords