Interface structure and luminescence properties of epitaxial PbSe films on InAs(111)A
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DOI: 10.1116/6.0000774
Abstract: Epitaxial heterostructures of narrow-gap IV-VI and III-V semiconductors offer a platform for new electronics and mid-infrared photonics. Stark dissimilarities in the bonding and the crystal structure between the rocksalt IV–VIs and the zincblende III–Vs, however,… read more here.
Keywords: iii; pbse; interface structure; inas 111 ... See more keywords