Molecular beam epitaxy growth of InAs/AlSb superlattices on GaAs substrates
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.06.013
Abstract: Abstract We report on the molecular beam epitaxial growth of 13ML InAs/5ML AlSb type-II superlattice on highly lattice mismatched GaAs (0 0 1) substrate. The high lattice mismatch of 7.35% between the superlattice and GaAs substrate is… read more here.
Keywords: inas alsb; molecular beam; superlattice; growth ... See more keywords
Large hh-lh splitting energy for InAs/AlSb/GaSb based N-structure photodetectors
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.4999632
Abstract: We investigate the band properties of InAs/AlSb/GaSb (N-structure) and InAs/GaSb material based type II superlattice (T2SL) photodedectors. The superlattice empirical pseudopotential method is used to define band-structures such as the bandgap and heavy hole-light hole… read more here.
Keywords: splitting energy; alsb gasb; inas alsb; structure ... See more keywords
Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16051968
Abstract: We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management,… read more here.
Keywords: growth; balanced inas; strain balanced; strain ... See more keywords