Articles with "inas gaas" as a keyword



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Tracing the two- to three-dimensional transition in InAs/GaAs sub-monolayer quantum dot growth

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Published in 2020 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2020.146713

Abstract: Abstract A two- to three-dimensional (2D to 3D) transition in InAs/GaAs sub-monolayer quantum dot (SML-QD) growth was investigated, and its evolution was traced. From the AFM results, the SML-QDs disappeared gradually and plateaus around each… read more here.

Keywords: three dimensional; inas gaas; two three; transition ... See more keywords
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Raman study of InAs/GaAs quantum dot solar cells

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Published in 2019 at "Current Applied Physics"

DOI: 10.1016/j.cap.2019.07.010

Abstract: Abstract We report polarized and resonant Raman study of InAs/GaAs quantum dot solar cell (QDSC) structures. Raman spectra obtained from the top surfaces of the samples suggested that the formation of InAs QDs induced tensile… read more here.

Keywords: study inas; raman study; quantum dot; inas gaas ... See more keywords
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Atomistic behaviour of (n × 3) -reconstructed areas of InAs-GaAs(001) surface at the growth condition

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2017.01.009

Abstract: Abstract We have investigated the spatial evolution of ( n × 3 ) surface reconstructed areas during the molecular beam epitaxial growth of InAs–GaAs(001) by using ab initio-based calculation and in situ observation, in order… read more here.

Keywords: inas gaas; reconstructed areas; surface; growth ... See more keywords
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Investigation of intersubband transitions in truncated pyramid-shaped InAs/GaAs quantum dots coupled to wetting layer: Strain and size matter

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Published in 2018 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2018.08.010

Abstract: Abstract In this paper, we theoretically report competition behaviour of size and strain effects on the InAs/GaAs quantum dots (QDs) eigenenergies, the envelop functions and also transition energies of the z-polarized WL-to-S states with varying… read more here.

Keywords: inas gaas; gaas quantum; strain size; size ... See more keywords
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Single Plasmon Generation in an InAs/GaAs Quantum Dot in a Transfer-Printed Plasmonic Microring Resonator

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Published in 2019 at "ACS Photonics"

DOI: 10.1021/acsphotonics.8b01749

Abstract: We report single plasmon generation with a self-assembled InAs/GaAs quantum dot embedded in a plasmonic microring resonator. The plasmonic cavity based on a GaAs microring is defined on an atomically smooth silver surface. We fabricated… read more here.

Keywords: single plasmon; quantum dot; inas gaas; plasmon generation ... See more keywords

O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy

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Published in 2019 at "AIP Advances"

DOI: 10.1063/1.5065527

Abstract: Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers. In this paper, we demonstrate… read more here.

Keywords: inas gaas; laser; gaas quantum; hybrid epitaxy ... See more keywords
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Strain Balancing of Metal-Organic Vapour Phase Epitaxy InAs/GaAs Quantum Dot Lasers

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Published in 2017 at "IEEE Journal of Selected Topics in Quantum Electronics"

DOI: 10.1109/jstqe.2017.2703666

Abstract: Incorporation of a GaAs0.8P0.2 layer allows strain balancing to be achieved in self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic vapor phase epitaxy. Tuneable wavelength and high density are obtained through growth parameter optimization,… read more here.

Keywords: inas gaas; gaas quantum; gaas; metal organic ... See more keywords

An Analytical Approach to Study Annealing Induced Interdiffusion of In and Ga for Truncated Pyramidal InAs/GaAs Quantum Dots

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Published in 2020 at "IEEE Transactions on Nanotechnology"

DOI: 10.1109/tnano.2020.2975934

Abstract: A strain-assisted model for studying the annealing induced interdiffusion of constituent atoms in truncated pyramidal InAs/GaAs self-assembled quantum dot (QD) is developed. In our model, we have considered the equiprobable diffusion of Ga and In… read more here.

Keywords: truncated pyramidal; pyramidal inas; induced interdiffusion; inas gaas ... See more keywords
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The Energy Spectrum and Wave Functions of Electrons in Tunnel-Coupled Spherical InAs/GaAs Quantum Dots

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Published in 2020 at "Technical Physics Letters"

DOI: 10.1134/s1063785020030219

Abstract: Abstract Some results of the numerical calculation of the electron ground state energy and electron density in tunnel-coupled InAs/GaAs quantum dots composing a simple cubic superlattice are presented. The calculation is performed within the modified… read more here.

Keywords: inas gaas; energy; gaas quantum; tunnel coupled ... See more keywords
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

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Published in 2018 at "Nanoscale Research Letters"

DOI: 10.1186/s11671-018-2472-y

Abstract: The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot… read more here.

Keywords: inas gaas; quantum; quantum dot; dot lasers ... See more keywords
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All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).

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Published in 2018 at "Optics express"

DOI: 10.1364/oe.26.011568

Abstract: Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally… read more here.

Keywords: inas gaas; lasers axis; mbe grown; axis 001 ... See more keywords