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Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.146713
Abstract: Abstract A two- to three-dimensional (2D to 3D) transition in InAs/GaAs sub-monolayer quantum dot (SML-QD) growth was investigated, and its evolution was traced. From the AFM results, the SML-QDs disappeared gradually and plateaus around each…
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Keywords:
three dimensional;
inas gaas;
two three;
transition ... See more keywords
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Published in 2019 at "Current Applied Physics"
DOI: 10.1016/j.cap.2019.07.010
Abstract: Abstract We report polarized and resonant Raman study of InAs/GaAs quantum dot solar cell (QDSC) structures. Raman spectra obtained from the top surfaces of the samples suggested that the formation of InAs QDs induced tensile…
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Keywords:
study inas;
raman study;
quantum dot;
inas gaas ... See more keywords
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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.009
Abstract: Abstract We have investigated the spatial evolution of ( n × 3 ) surface reconstructed areas during the molecular beam epitaxial growth of InAs–GaAs(001) by using ab initio-based calculation and in situ observation, in order…
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Keywords:
inas gaas;
reconstructed areas;
surface;
growth ... See more keywords
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Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.08.010
Abstract: Abstract In this paper, we theoretically report competition behaviour of size and strain effects on the InAs/GaAs quantum dots (QDs) eigenenergies, the envelop functions and also transition energies of the z-polarized WL-to-S states with varying…
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Keywords:
inas gaas;
gaas quantum;
strain size;
size ... See more keywords
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Published in 2019 at "ACS Photonics"
DOI: 10.1021/acsphotonics.8b01749
Abstract: We report single plasmon generation with a self-assembled InAs/GaAs quantum dot embedded in a plasmonic microring resonator. The plasmonic cavity based on a GaAs microring is defined on an atomically smooth silver surface. We fabricated…
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Keywords:
single plasmon;
quantum dot;
inas gaas;
plasmon generation ... See more keywords
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Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5065527
Abstract: Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers. In this paper, we demonstrate…
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Keywords:
inas gaas;
laser;
gaas quantum;
hybrid epitaxy ... See more keywords
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Published in 2017 at "IEEE Journal of Selected Topics in Quantum Electronics"
DOI: 10.1109/jstqe.2017.2703666
Abstract: Incorporation of a GaAs0.8P0.2 layer allows strain balancing to be achieved in self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic vapor phase epitaxy. Tuneable wavelength and high density are obtained through growth parameter optimization,…
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Keywords:
inas gaas;
gaas quantum;
gaas;
metal organic ... See more keywords
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Published in 2020 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2020.2975934
Abstract: A strain-assisted model for studying the annealing induced interdiffusion of constituent atoms in truncated pyramidal InAs/GaAs self-assembled quantum dot (QD) is developed. In our model, we have considered the equiprobable diffusion of Ga and In…
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Keywords:
truncated pyramidal;
pyramidal inas;
induced interdiffusion;
inas gaas ... See more keywords
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Published in 2020 at "Technical Physics Letters"
DOI: 10.1134/s1063785020030219
Abstract: Abstract Some results of the numerical calculation of the electron ground state energy and electron density in tunnel-coupled InAs/GaAs quantum dots composing a simple cubic superlattice are presented. The calculation is performed within the modified…
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Keywords:
inas gaas;
energy;
gaas quantum;
tunnel coupled ... See more keywords
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Published in 2018 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-018-2472-y
Abstract: The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot…
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Keywords:
inas gaas;
quantum;
quantum dot;
dot lasers ... See more keywords
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Published in 2018 at "Optics express"
DOI: 10.1364/oe.26.011568
Abstract: Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally…
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Keywords:
inas gaas;
lasers axis;
mbe grown;
axis 001 ... See more keywords