Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity
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DOI: 10.1063/1.4993894
Abstract: We have experimentally studied the persistent photoconductivity (PPC) in inverted InAs/GaSb and InAs/GaInSb quantum wells, which can be tuned into a bulk-insulating state by electron-hole hybridization. Specifically we tune the bulk band structure and carriers… read more here.
Keywords: inas gainsb; persistent photoconductivity; inas gasb; gasb inas ... See more keywords
Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices
Sign Up to like & getrecommendations! Published in 2017 at "Optical Engineering"
DOI: 10.1117/1.oe.56.9.091604
Abstract: Abstract. Significantly improved carrier lifetimes in very long-wave infrared (VLWIR) InAs/GaInSb superlattice (SL) absorbers are demonstrated using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SL structure that produces an ∼25 μm response at 10… read more here.
Keywords: inas gainsb; carrier lifetimes; carrier; lifetimes long ... See more keywords