Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07398-x
Abstract: The highest performance of interband cascade detectors optimized for the longwave range of infrared radiation is investigated in this work to include decisive electric gain contribution. Presently, AIIIBV-type-II superlattice systems exhibit short carrier lifetimes limited… read more here.
Keywords: inas gasb; carrier; gasb inas; performance ... See more keywords
Dark current analysis of an InAs/GaSb type II superlattice infrared photodiode with SiO2 passivation
Sign Up to like & getrecommendations! Published in 2021 at "Journal of the Korean Physical Society"
DOI: 10.1007/s40042-021-00137-8
Abstract: In this study, we present the current–voltage (I–V) characteristics of a 10 ML InAs/10 ML GaSb type-II superlattice (T2SL) with p-i-n structures for mid-infrared detection. At a negative bias and a temperature of 50 mV and… read more here.
Keywords: dark current; passivation; inas gasb; type superlattice ... See more keywords
InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.079
Abstract: Abstract Magnetotransport, optical, spin-dependent and topological properties of the composite InAs/GaSb/AlSb quantum wells based on the broken-gap heterojunctions have been actively studied during the last two decades as promising materials for spintronic and nanoelectronic applications.… read more here.
Keywords: composite quantum; gasb alsb; inas gasb; spectroscopy ... See more keywords
Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice.
Sign Up to like & getrecommendations! Published in 2017 at "Micron"
DOI: 10.1016/j.micron.2016.10.003
Abstract: We report on a direct measurement of cation and anion sub-lattice strain in an InAs/GaSb type-II strained layer superlattice (T2SLs) using atomic resolution imaging and advanced image processing. Atomic column positions in InAs and GaSb… read more here.
Keywords: lattice strain; gasb; sub lattice; inas gasb ... See more keywords
Electrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.08.022
Abstract: Abstract We report a study on the temperature dependence of electrical and optical performance of InAs/GaSb based type-II superlattice (T2SL) pin photodetectors in the mid wavelength infrared range (MWIR). The SL structure exhibits an optical… read more here.
Keywords: infrared range; wavelength infrared; inas gasb; electrical optical ... See more keywords
Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices
Sign Up to like & getrecommendations! Published in 2023 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.2c19292
Abstract: Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the mechanisms… read more here.
Keywords: sample; inas gasb; type superlattices; gasb ... See more keywords
Real Space Imaging of Topological Edge States in InAs/GaSb and InAs/InxGa1-xSb Quantum Wells.
Sign Up to like & getrecommendations! Published in 2019 at "ACS nano"
DOI: 10.1021/acsnano.9b05611
Abstract: Structure dependent differential tunneling conductance, dI/dV, profiles obtained using scanning tunneling microscopy on both (110)-cleaved surfaces and (001)-growth surfaces in InAs/GaSb and InAs/InxGa1-xSb quantum wells (QWs), which are platforms of two-dimensional topological insulator (2D-TI), clearly… read more here.
Keywords: inas gasb; edge states; inxga1 xsb; gasb inas ... See more keywords
Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD
Sign Up to like & getrecommendations! Published in 2020 at "Electronics Letters"
DOI: 10.1049/el.2020.1076
Abstract: The lateral diffusion length ( L h ) of minority carriers in LWIR InAs/GaSb superlattice detectors grown by metalorganic chemical vapour deposition was evaluated. The deeply-etched PNn device exhibits a diffusion-limited behaviour at 80 K,… read more here.
Keywords: superlattice detectors; diffusion; inas gasb; gasb superlattice ... See more keywords
Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity
Sign Up to like & getrecommendations! Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4993894
Abstract: We have experimentally studied the persistent photoconductivity (PPC) in inverted InAs/GaSb and InAs/GaInSb quantum wells, which can be tuned into a bulk-insulating state by electron-hole hybridization. Specifically we tune the bulk band structure and carriers… read more here.
Keywords: inas gainsb; persistent photoconductivity; inas gasb; gasb inas ... See more keywords
Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5030444
Abstract: The minority carrier diffusion length was directly measured by the variable-temperature Electron Beam-Induced Current technique in InAs/GaSb type-II strain-layer-superlattice infrared-detector structures. The Molecular Beam Epitaxy-grown midwave infrared superlattices comprised 10 monolayers of InAs and 10… read more here.
Keywords: minority; diffusion; inas gasb; diffusion length ... See more keywords
Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5042064
Abstract: An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecular beam epitaxy using a 200 nm strained GaAs1-ySby dislocation filtering buffer. X-ray analysis demonstrated near complete strain relaxation of the metamorphic… read more here.
Keywords: tunnel diode; inas gasb; gasb tunnel; dislocation filtering ... See more keywords