Low specific contact resistance between InAs/Ni–InAs evaluated by multi-sidewall TLM
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DOI: 10.1063/5.0150296
Abstract: The specific contact resistance ρint of the InAs/Ni–InAs interface was evaluated by the multi-sidewall transmission line method (MSTLM), where Ni–InAs was formed by alloying Ni and InAs-on-insulator substrates. The revised test structure for MSTLM has… read more here.
Keywords: inas inas; contact resistance; inas; specific contact ... See more keywords