Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07255-x
Abstract: We recently reported mid-wavelength infrared (MWIR) InAs/InAsSb type II strained-layer superlattice (T2SLS) unipolar barrier detectors and focal-plane arrays with significantly higher operating temperature than InSb. Herein, we document the development leading to the MWIR InAs/InAsSb T2SLS… read more here.
Keywords: inassb type; unipolar barrier; layer superlattice; strained layer ... See more keywords
Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07398-x
Abstract: The highest performance of interband cascade detectors optimized for the longwave range of infrared radiation is investigated in this work to include decisive electric gain contribution. Presently, AIIIBV-type-II superlattice systems exhibit short carrier lifetimes limited… read more here.
Keywords: inas gasb; carrier; gasb inas; performance ... See more keywords
Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.4993673
Abstract: We show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone… read more here.
Keywords: microscopy; layer superlattice; strained layer; strain fluctuations ... See more keywords
Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range
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DOI: 10.1063/5.0202170
Abstract: Four types of barrier detectors based on a type II InAs/InAsSb superlattice with a wide-gap barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The tested detectors differed in the… read more here.
Keywords: barrier detectors; type superlattice; comparison type; inas inassb ... See more keywords
The effect of p-doping in mid- and long-wavelength InAs/InAsSb superlattice complementary barrier infrared detectors
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DOI: 10.1063/5.0236130
Abstract: We compare mid-wavelength InAs/InAsSb superlattice complementary barrier infrared detectors (CBIRDs) with n-type and p-type absorbers and also report results on a series of five long-wavelength CBIRD samples that have the same structure but with a… read more here.
Keywords: mid; long wavelength; inassb superlattice; wavelength ... See more keywords
Transport properties in InAs/InAsSb type-II superlattices: From MWIR to VLWIR
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0265432
Abstract: In recent years, InAs/InAsSb type-II superlattices have emerged as promising candidates to rival state-of-the-art mercury cadmium telluride systems for mid-wavelength infrared (MWIR) imaging applications. However, extending their performance to longer wavelengths remains a challenge, as… read more here.
Keywords: transport; type superlattices; inassb type; transport properties ... See more keywords
Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2930106
Abstract: In this letter, we report on the InAs/InAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength ( $\lambda _{\mathbf {c}})~\sim ~15~\mu \text{m}$ for temperatures (T) reached by three-stage thermoelectric (TE) cooling to minimize the… read more here.
Keywords: inas inassb; tex math; inline formula;
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductors"
DOI: 10.1134/s1063782619060174
Abstract: Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor phase epitaxy. Two types (A and B) of light-emitting diodes with wavelengths of 4.1 and 4.7 μm at the emission-spectrum maximum are formed from these heterostructures.… read more here.
Keywords: light emitting; emission; inas inassb; inassb inassbp ... See more keywords
High operating temperature mid-wavelength infrared detectors based on InAs/InAsSb superlattices with electron block interfacial graded doping.
Sign Up to like & getrecommendations! Published in 2025 at "Optics express"
DOI: 10.1364/oe.572457
Abstract: A high operating temperature mid-wavelength pBn infrared detector based on InAs/InAsSb superlattices with electron block interfacial graded doping is demonstrated. The photodetector exhibits saturated quantum efficiency from 77 K to 250 K under zero bias,… read more here.
Keywords: temperature; graded doping; wavelength; interfacial graded ... See more keywords