Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07255-x
Abstract: We recently reported mid-wavelength infrared (MWIR) InAs/InAsSb type II strained-layer superlattice (T2SLS) unipolar barrier detectors and focal-plane arrays with significantly higher operating temperature than InSb. Herein, we document the development leading to the MWIR InAs/InAsSb T2SLS… read more here.
Keywords: inassb type; unipolar barrier; layer superlattice; strained layer ... See more keywords
Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07398-x
Abstract: The highest performance of interband cascade detectors optimized for the longwave range of infrared radiation is investigated in this work to include decisive electric gain contribution. Presently, AIIIBV-type-II superlattice systems exhibit short carrier lifetimes limited… read more here.
Keywords: inas gasb; carrier; gasb inas; performance ... See more keywords
Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.4993673
Abstract: We show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone… read more here.
Keywords: microscopy; layer superlattice; strained layer; strain fluctuations ... See more keywords
Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2930106
Abstract: In this letter, we report on the InAs/InAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength ( $\lambda _{\mathbf {c}})~\sim ~15~\mu \text{m}$ for temperatures (T) reached by three-stage thermoelectric (TE) cooling to minimize the… read more here.
Keywords: inas inassb; tex math; inline formula;
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductors"
DOI: 10.1134/s1063782619060174
Abstract: Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor phase epitaxy. Two types (A and B) of light-emitting diodes with wavelengths of 4.1 and 4.7 μm at the emission-spectrum maximum are formed from these heterostructures.… read more here.
Keywords: light emitting; emission; inas inassb; inassb inassbp ... See more keywords