Optical properties of coherent InAs/InGaAs quantum dash-in-a-well for strong 2 μm emission enabled by ripening process
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2020.157783
Abstract: Abstract We report molecular beam epitaxy of InAs quantum dash-in-a-well (DWELL) on InP for 2 μm wavelength emission using intentional ripening. By inserting the quantum dashes into a 10 nm InGaAs quantum well and employing… read more here.
Keywords: dash well; emission; inas ingaas; optical properties ... See more keywords
Atomic-Scale Characterization of Planar Selective-Area-Grown InAs/InGaAs Nanowires.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c09594
Abstract: Atomic-scale information about the structural and compositional properties of novel semiconductor nanowires is essential to tailoring their properties for specific applications, but characterization at this length scale remains a challenging task. Here, quasi-1D InAs/InGaAs semiconductor… read more here.
Keywords: atomic scale; microscopy; selective area; inas ingaas ... See more keywords
Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5041908
Abstract: We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage… read more here.
Keywords: operation inas; gbit operation; dark current; inas ingaas ... See more keywords
Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab1866
Abstract: Metamorphic InAs/In0.15Ga0.85As and InAs/In0.31Ga0.69As quantum dot (QD) arrays are known to be photosensitive in the telecommunication ranges at 1.3 and 1.55 μm, respectively; however, for photonic applications of these nanostructures, the effect of levels related… read more here.
Keywords: long term; coulomb screening; quantum dot; inas ingaas ... See more keywords
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-017-2331-2
Abstract: The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by… read more here.
Keywords: gaas quantum; metamorphic inas; quantum dot; inas ingaas ... See more keywords
Intensity noise behavior of an InAs/InGaAs quantum dot laser emitting on ground states and excited states.
Sign Up to like & getrecommendations! Published in 2018 at "Optics letters"
DOI: 10.1364/ol.43.000867
Abstract: We experimentally and numerically study the amplitude stability of an InAs/InGaAs quantum dot laser emitting simultaneously on ground states (GSs) and excited state (ESs) at center wavelengths of 1245 and 1168 nm, respectively. The stability is… read more here.
Keywords: laser; quantum dot; dot laser; inas ingaas ... See more keywords
InAs/InGaAs/InAlAs interband quantum well infrared photodetector (IQWIP) with cut-off response wavelength at 1.93 μm
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Express"
DOI: 10.7567/1882-0786/ab017f
Abstract: Utilizing the high efficiency of the localized carrier extraction in the low-dimensional semiconductors within a PN junction, an InP-based InAs/InGaAs/InAlAs interband quantum well infrared photodetector has been investigated. Although the thermal energy is much less… read more here.
Keywords: photodetector; inalas interband; ingaas inalas; inas ingaas ... See more keywords