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1
Published in 2020 at "Nano Research"
DOI: 10.1007/s12274-020-2745-5
Abstract: We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/InP/GaAsSb core-dualshell nanowires. We present a device fabrication protocol based on wet-etching processes on selected areas of…
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Keywords:
gaassb core;
inp gaassb;
shell;
inas inp ... See more keywords
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Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.7b03742
Abstract: The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients…
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Keywords:
inp nanowire;
atomically sharp;
nanowire;
nanowire heterostructures ... See more keywords
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1
Published in 2020 at "Nano Letters"
DOI: 10.1021/acs.nanolett.9b04850
Abstract: We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays…
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Keywords:
barrier transparency;
nanowire quantum;
inp nanowire;
orbital tuning ... See more keywords
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2
Published in 2022 at "ACS Applied Nano Materials"
DOI: 10.1021/acsanm.2c01197
Abstract: We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes…
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Keywords:
inas inp;
droplet;
morphology;
inp droplet ... See more keywords
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Published in 2021 at "Nanoscale"
DOI: 10.1039/d1nr04263g
Abstract: Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying…
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Keywords:
inas inp;
quantum dot;
geometry;
inp ... See more keywords
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1
Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5022480
Abstract: This paper reports on the spectral linewidth of InAs/InP quantum dot distributed feedback lasers. Owing to a low inversion factor and a low linewidth enhancement factor, a narrow spectral linewidth of 160 kHz (80 kHz intrinsic linewidth)…
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Keywords:
inas inp;
linewidth inas;
spectral linewidth;
quantum dot ... See more keywords
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1
Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac659e
Abstract: We investigated metal-organic vapor phase epitaxy grown droplet epitaxy (DE) and Stranski–Krastanov (SK) InAs/InP quantum dots (QDs) by cross-sectional scanning tunneling microscopy (X-STM). We present an atomic-scale comparison of structural characteristics of QDs grown by…
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Keywords:
inas inp;
quantum dots;
formation;
droplet epitaxy ... See more keywords
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1
Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.2975632
Abstract: A two-sectioned quantum dash laser structure based on an InAs/InP chirped active region medium is investigated as a monolithic broadband tunable laser. A thorough parametric analysis on the effect of three tuning parameters (viz. injection…
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Keywords:
dash laser;
inas inp;
laser;
quantum dash ... See more keywords
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1
Published in 2018 at "IEEE Journal of Quantum Electronics"
DOI: 10.1109/jqe.2017.2779880
Abstract: It was found experimentally that growing an ultrathin GaP interlayer/sublayer before InAs quantum dots (QDs) grown on InGaAsP barrier lattice-matched to InP (001) substrates is an efficient way to tune the emission wavelength of InAs/InP…
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Keywords:
gain spectral;
spectral bandwidth;
quantum dots;
inas inp ... See more keywords
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Published in 2017 at "Optics express"
DOI: 10.1364/oe.25.027262
Abstract: We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A temperature dependent shift of the peak gain…
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Keywords:
inp quantum;
range;
quantum dot;
dot optical ... See more keywords
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Published in 2019 at "Optics express"
DOI: 10.1364/oe.27.035368
Abstract: We have developed and experimentally demonstrated a novel monolithic InAs/InP quantum-dash dual-wavelength distributed feedback (QD DW-DFB) C-band laser as a compact optical beat source to generate millimeter-wave (MMW) signals. The device uses a common gain…
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Keywords:
monolithic inas;
inp quantum;
dash dual;
quantum dash ... See more keywords