Articles with "inas inp" as a keyword



Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires

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Published in 2020 at "Nano Research"

DOI: 10.1007/s12274-020-2745-5

Abstract: We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/InP/GaAsSb core-dualshell nanowires. We present a device fabrication protocol based on wet-etching processes on selected areas of… read more here.

Keywords: gaassb core; inp gaassb; shell; inas inp ... See more keywords
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Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces.

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Published in 2018 at "Nano letters"

DOI: 10.1021/acs.nanolett.7b03742

Abstract: The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients… read more here.

Keywords: inp nanowire; atomically sharp; nanowire; nanowire heterostructures ... See more keywords
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Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

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Published in 2020 at "Nano Letters"

DOI: 10.1021/acs.nanolett.9b04850

Abstract: We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays… read more here.

Keywords: barrier transparency; nanowire quantum; inp nanowire; orbital tuning ... See more keywords
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Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

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Published in 2022 at "ACS Applied Nano Materials"

DOI: 10.1021/acsanm.2c01197

Abstract: We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes… read more here.

Keywords: inas inp; droplet; morphology; inp droplet ... See more keywords
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Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring.

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Published in 2021 at "Nanoscale"

DOI: 10.1039/d1nr04263g

Abstract: Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying… read more here.

Keywords: inas inp; quantum dot; geometry; inp ... See more keywords
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Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers

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Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5022480

Abstract: This paper reports on the spectral linewidth of InAs/InP quantum dot distributed feedback lasers. Owing to a low inversion factor and a low linewidth enhancement factor, a narrow spectral linewidth of 160 kHz (80 kHz intrinsic linewidth)… read more here.

Keywords: inas inp; linewidth inas; spectral linewidth; quantum dot ... See more keywords
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Study of Size, Shape, and Etch pit formation in InAs/InP Droplet Epitaxy Quantum Dots

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Published in 2022 at "Nanotechnology"

DOI: 10.1088/1361-6528/ac659e

Abstract: We investigated metal-organic vapor phase epitaxy grown droplet epitaxy (DE) and Stranski–Krastanov (SK) InAs/InP quantum dots (QDs) by cross-sectional scanning tunneling microscopy (X-STM). We present an atomic-scale comparison of structural characteristics of QDs grown by… read more here.

Keywords: inas inp; quantum dots; formation; droplet epitaxy ... See more keywords
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Monolithic Tunable InAs/InP Broadband Quantum-Dash Laser

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Published in 2020 at "IEEE Access"

DOI: 10.1109/access.2020.2975632

Abstract: A two-sectioned quantum dash laser structure based on an InAs/InP chirped active region medium is investigated as a monolithic broadband tunable laser. A thorough parametric analysis on the effect of three tuning parameters (viz. injection… read more here.

Keywords: dash laser; inas inp; laser; quantum dash ... See more keywords
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Wavelength Blue-Shifting and Gain Spectral Bandwidth of InAs/InP Quantum Dots for Laser Applications Around $1.55~\mu$ m

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Published in 2018 at "IEEE Journal of Quantum Electronics"

DOI: 10.1109/jqe.2017.2779880

Abstract: It was found experimentally that growing an ultrathin GaP interlayer/sublayer before InAs quantum dots (QDs) grown on InGaAsP barrier lattice-matched to InP (001) substrates is an efficient way to tune the emission wavelength of InAs/InP… read more here.

Keywords: gain spectral; spectral bandwidth; quantum dots; inas inp ... See more keywords
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Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures.

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Published in 2017 at "Optics express"

DOI: 10.1364/oe.25.027262

Abstract: We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A temperature dependent shift of the peak gain… read more here.

Keywords: inp quantum; range; quantum dot; dot optical ... See more keywords
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Monolithic InAs/InP quantum dash dual-wavelength DFB laser with ultra-low noise common cavity modes for millimeter-wave applications.

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Published in 2019 at "Optics express"

DOI: 10.1364/oe.27.035368

Abstract: We have developed and experimentally demonstrated a novel monolithic InAs/InP quantum-dash dual-wavelength distributed feedback (QD DW-DFB) C-band laser as a compact optical beat source to generate millimeter-wave (MMW) signals. The device uses a common gain… read more here.

Keywords: monolithic inas; inp quantum; dash dual; quantum dash ... See more keywords