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Published in 2025 at "Nano letters"
DOI: 10.1021/acs.nanolett.5c02410
Abstract: Hybrid superconductor-semiconductor platforms are foundational to advancing quantum information technologies, motivating the integration of materials with clean interfaces, robust superconductivity, and scalable architectures. Here, we report the synthesis and analysis of inclined InAs nanowires, conformally…
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Keywords:
nanowire shadow;
shadow defined;
inas nanowire;
defined josephson ... See more keywords
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Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.8b03775
Abstract: In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays on InP substrates, forming InAs-InP heterojunctions. We measure a rectification ratio greater than…
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Keywords:
wavelength infrared;
photodetector short;
dark current;
short wavelength ... See more keywords
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Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa8e23
Abstract: We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related…
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Keywords:
pure phase;
phase;
inas nanowire;
nanowire transistors ... See more keywords
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Published in 2019 at "Science Advances"
DOI: 10.1126/sciadv.aav1235
Abstract: Reentrant superconductivity, an attribute of topological superconductors, can result from a concealed localized charge. A semiconductor nanowire with strong spin-orbit coupling in proximity to a superconductor is predicted to display Majorana edge states emerging under…
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Keywords:
quasi ballistic;
reentrant superconductivity;
inas nanowire;
charge localization ... See more keywords