Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n Heterojunctions.
Sign Up to like & getrecommendations! Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.8b03775
Abstract: In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays on InP substrates, forming InAs-InP heterojunctions. We measure a rectification ratio greater than… read more here.
Keywords: wavelength infrared; photodetector short; dark current; short wavelength ... See more keywords
The influence of atmosphere on performance of pure-phase WZ and ZB InAs nanowire transistors.
Sign Up to like & getrecommendations! Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa8e23
Abstract: We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related… read more here.
Keywords: pure phase; phase; inas nanowire; nanowire transistors ... See more keywords
Charge localization and reentrant superconductivity in a quasi-ballistic InAs nanowire coupled to superconductors
Sign Up to like & getrecommendations! Published in 2019 at "Science Advances"
DOI: 10.1126/sciadv.aav1235
Abstract: Reentrant superconductivity, an attribute of topological superconductors, can result from a concealed localized charge. A semiconductor nanowire with strong spin-orbit coupling in proximity to a superconductor is predicted to display Majorana edge states emerging under… read more here.
Keywords: quasi ballistic; reentrant superconductivity; inas nanowire; charge localization ... See more keywords