Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.04.013
Abstract: Abstract We investigate monocrystalline InAs nanowires (NWs) which are grown catalyst assisted by molecular beam epitaxy (MBE) and create the catalyst by focused ion beam (FIB) implanted Au spots. With this combination of methods an… read more here.
Keywords: inas nanowires; molecular beam; focused ion; beam epitaxy ... See more keywords
Andreev Molecule in Parallel InAs Nanowires
Sign Up to like & getrecommendations! Published in 2021 at "Nano Letters"
DOI: 10.1021/acs.nanolett.1c01956
Abstract: Coupling individual atoms fundamentally changes the state of matter: electrons bound to atomic cores become delocalized turning an insulating state to a metallic one. A chain of atoms could lead to more exotic states if… read more here.
Keywords: state; molecule; inas nanowires; andreev molecule ... See more keywords
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten.
Sign Up to like & getrecommendations! Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c04908
Abstract: 3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have… read more here.
Keywords: integration inas; assisted selective; integration; epitaxy ... See more keywords
Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires.
Sign Up to like & getrecommendations! Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.6b04629
Abstract: Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires… read more here.
Keywords: 290 reveals; photoluminescence 290; inas nanowires; midinfrared photoluminescence ... See more keywords
Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires.
Sign Up to like & getrecommendations! Published in 2019 at "Nano letters"
DOI: 10.1021/acs.nanolett.9b04383
Abstract: We study the magnetotransport properties of single InAs nanowires grown by selective-area metal-organic vapor-phase epitaxy. The semiconducting InAs nanowires exhibit a large positive ordinary magnetoresistance effect. However, a deviation from the corresponding quadratic behavior is… read more here.
Keywords: magnetotransport; inas nanowires; single inas; properties single ... See more keywords
Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires
Sign Up to like & getrecommendations! Published in 2022 at "ACS Nano"
DOI: 10.1021/acsnano.2c10877
Abstract: Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have… read more here.
Keywords: signatures gate; driven equilibrium; gate; gate driven ... See more keywords
Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep46110
Abstract: The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to… read more here.
Keywords: nanowires flexible; catalyzed inas; inas nanowires; self catalyzed ... See more keywords
High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregation
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acbeb2
Abstract: InAs nanowires show important potential applications in novel nanoelectronic devices, infrared optoelectronic devices and quantum devices, and all these applications require controllable growth of the InAs nanowires. However, the growth direction of metal-assisted InAs nanowires… read more here.
Keywords: inas nanowires; quality; molecular beam; beam epitaxy ... See more keywords
Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acc810
Abstract: The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an… read more here.
Keywords: plane inas; conductance; selective area; inas nanowires ... See more keywords
Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field
Sign Up to like & getrecommendations! Published in 2018 at "Physical Review B"
DOI: 10.1103/physrevb.97.125308
Abstract: Narrow band gap III-V based nanowires are subject to intense research, notably thanks to the exceptional mobility of the carriers. Moreover, due to the strong spin-orbit coupling combined with the ability to host superconductivity, they… read more here.
Keywords: properties quasiballistic; field; transport properties; inas nanowires ... See more keywords
Long interior carrier lifetime in selective-area InAs nanowires on silicon
Sign Up to like & getrecommendations! Published in 2020 at "Optical Materials Express"
DOI: 10.1364/ome.403531
Abstract: Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior… read more here.
Keywords: inas nanowires; inas; recombination; carrier ... See more keywords