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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.04.013
Abstract: Abstract We investigate monocrystalline InAs nanowires (NWs) which are grown catalyst assisted by molecular beam epitaxy (MBE) and create the catalyst by focused ion beam (FIB) implanted Au spots. With this combination of methods an… read more here.
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Published in 2021 at "Nano Letters"
DOI: 10.1021/acs.nanolett.1c01956
Abstract: Coupling individual atoms fundamentally changes the state of matter: electrons bound to atomic cores become delocalized turning an insulating state to a metallic one. A chain of atoms could lead to more exotic states if… read more here.
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Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c04908
Abstract: 3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have… read more here.
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Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.6b04629
Abstract: Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires… read more here.
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Published in 2019 at "Nano letters"
DOI: 10.1021/acs.nanolett.9b04383
Abstract: We study the magnetotransport properties of single InAs nanowires grown by selective-area metal-organic vapor-phase epitaxy. The semiconducting InAs nanowires exhibit a large positive ordinary magnetoresistance effect. However, a deviation from the corresponding quadratic behavior is… read more here.
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Published in 2022 at "ACS Nano"
DOI: 10.1021/acsnano.2c10877
Abstract: Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have… read more here.
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Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep46110
Abstract: The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to… read more here.
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Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acbeb2
Abstract: InAs nanowires show important potential applications in novel nanoelectronic devices, infrared optoelectronic devices and quantum devices, and all these applications require controllable growth of the InAs nanowires. However, the growth direction of metal-assisted InAs nanowires… read more here.
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Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acc810
Abstract: The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an… read more here.
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Published in 2025 at "Physical Review B"
DOI: 10.1103/l4tq-bxq9
Abstract: We investigate a non-equilibrium aspect of the current-driven superconducting-normal phase transition in floating Al islands of epitaxial full-shell Al/InAs nanowires. Within a transition region discontinuous voltage jumps and hysteretic behaviour of the I-V characteristics are… read more here.
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Published in 2024 at "Physical Review B"
DOI: 10.1103/physrevb.111.l201402
Abstract: Electrons in closed systems can exhibit Coulomb blockade (CB) oscillations due to charge quantization. Here, we report CB oscillations in aluminum superconducting islands on InAs nanowires in the open regime. The Al island is connected… read more here.