InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
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DOI: 10.1063/1.5054292
Abstract: Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we… read more here.
Keywords: layer; atomic layer; inas oxide; oxide interface ... See more keywords