Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2017.06.030
Abstract: Abstract This study investigates the optical and structural properties of multilayer InAs QDs heterostructures designed with varying levels of growth interruption. Samples were subject to growth interruptions of 0, 25, 50, and 75 s (samples A,… read more here.
Keywords: mev; inas qds; growth interruption; growth ... See more keywords
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617050189
Abstract: InAs quantum dots (QDs) in a metamorphic InGaAs matrix are grown by MOVPE (metal-organic vapor-phase epitaxy) on GaAs substrates. The QDs emit light in the range 1380–1400 nm at room temperature. A multilayer metamorphic buffer… read more here.
Keywords: inas qds; qds metamorphic; metamorphic in0; layer ... See more keywords