Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD
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DOI: 10.1063/1.5021646
Abstract: We demonstrate room temperature operation of In0.5Ga0.5Sb/InAs type-II quantum well photodetectors on an InAs substrate grown by metal-organic chemical vapor deposition. At 300 K, the detector exhibits a dark current density of 0.12 A/cm2 and a peak… read more here.
Keywords: inas type; temperature operation; type quantum; room temperature ... See more keywords