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Published in 2018 at "Results in Physics"
DOI: 10.1016/j.rinp.2018.11.030
Abstract: Abstract The InAs/InAs1−xSbx type-II superlattices (T2SLs) grown on GaSb buffer layer and GaAs substrates have recently been applied for detectors for long wavelength infrared (LWIR) range and high operating temperature (HOT) conditions. The detailed modeling…
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Keywords:
energy bandgap;
band;
inas1 xsbx;
structure ... See more keywords
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Published in 2019 at "Optical Materials Express"
DOI: 10.1364/ome.10.000149
Abstract: The InAs1−xSbx ternary alloy band gap nonlinearly depends on the composition, which provides the opportunity for use of this material in devices operating in a wide range of infrared radiation. We present experimental results for…
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Keywords:
energy;
fraction determination;
inas1 xsbx;
mole fraction ... See more keywords