Growth and characterization of InGaAs/InAsSb superlattices by metal-organic chemical vapor deposition for mid-wavelength infrared photodetectors
Sign Up to like & getrecommendations! Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2020.106655
Abstract: Abstract InGaAs/InAsSb superlattices (SLs) were grown on InAs substrates by metal-organic chemical vapor deposition (MOCVD) for potential applications in mid-wavelength infrared photodetectors. Three In1-xGaxAs/InAs0.73Sb0.27 ternary SL samples, with x = 0.2, 0.25, and 0.3, were grown and… read more here.
Keywords: ingaas inassb; metal organic; inassb superlattices; organic chemical ... See more keywords
Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure
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DOI: 10.3390/ma15041419
Abstract: Photoluminescence in a double heterostructure based on a ternary InAsSb solid solution was observed in the mid-infrared range of 2.5–4 μm. A range of compositions of the InAs1−ySby ternary solid solution has been established, where… read more here.
Keywords: photoluminescence; photoluminescence spectroscopy; spectroscopy; inassb ... See more keywords
Features of carrier confinement in InAsSb(P) alloys and quantum wells for room-temperature operating mid-infrared emitters
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Express"
DOI: 10.7567/1882-0786/ab4981
Abstract: In this communication, we focus on the optical properties of InAsSbP/InAsSb/InAsSbP single quantum well structures grown on InAs substrates using the metal-organic vapor phase epitaxy (MOVPE) technique. The obtained Fourier transformed photoluminescence spectra allowed us… read more here.
Keywords: mid infrared; inassb; temperature; room temperature ... See more keywords