Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy
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DOI: 10.1016/j.jcrysgro.2017.01.035
Abstract: Abstract Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al 0.9 Ga 0.1 As 0.06 Sb 0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room… read more here.
Keywords: incorporation al0; dopant incorporation; doping efficiency; incorporation ... See more keywords