Phosphate incorporation in anodic hafnium oxide memristors
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DOI: 10.1016/j.apsusc.2021.149093
Abstract: Abstract The electrochemical fabrication of memristive devices based on Hf is demonstrated. Electrolyte incorporation in memristors is confirmed in oxides grown in 0.1, 0.5 and 1 M phosphate buffers. The impact of phosphate species on conductive… read more here.
Keywords: incorporation anodic; hafnium oxide; incorporation; anodic hafnium ... See more keywords