Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy
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DOI: 10.1016/j.apsusc.2016.11.189
Abstract: Abstract High-index Bi 2 Se 3 (221) film has been grown on In 2 Se 3 -buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial… read more here.
Keywords: index; index bi2se3; strain epitaxial; bi2se3 221 ... See more keywords