The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Engineering Materials"
DOI: 10.1002/adem.201901053
Abstract: Herein, solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistor (TFT) is fabricated utilizing metal nitrates as precursors, and the impact of nitrate ions in different solvents on the performances of IGZO TFT is demonstrated. During… read more here.
Keywords: solution processed; indium gallium; igzo; film ... See more keywords
High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5534-5
Abstract: High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding… read more here.
Keywords: gallium zinc; performance; film; stability ... See more keywords
Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5946-2
Abstract: To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each… read more here.
Keywords: gallium zinc; layer; aluminum oxide; al2o3 barrier ... See more keywords
Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma
Sign Up to like & getrecommendations! Published in 2018 at "Korean Journal of Chemical Engineering"
DOI: 10.1007/s11814-018-0034-8
Abstract: Plasma damage of indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) was investigated. The IGZO TFT was fabricated and the performance was measured before and after BCl3 and/or Cl2 plasma treatment to evaluate the IGZO damage. The… read more here.
Keywords: gallium zinc; thin film; zinc oxide; damage ... See more keywords
Influence of humic substances on the transport of indium and gallium in porous media.
Sign Up to like & getrecommendations! Published in 2020 at "Chemosphere"
DOI: 10.1016/j.chemosphere.2020.126099
Abstract: Indium and gallium are used widely in modern industry, mostly for the production of semiconductors. They are considered as Technology-Critical Elements and have therefore received growing attention in the past few years. We investigated the… read more here.
Keywords: substances transport; indium; gallium; humic substances ... See more keywords
Imaging the Reduction of Electron Trap States in Shelled Copper Indium Gallium Selenide Nanocrystals Using Ultrafast Electron Microscopy
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.8b03872
Abstract: Insertion of alkali metal ions, especially Na, is a well-established method to significantly increase the power conversion efficiency of copper indium gallium selenide (CIGSe)-based photovoltaic devices. However, although it is known that Na ions mostly… read more here.
Keywords: microscopy; ultrafast electron; copper indium; gallium selenide ... See more keywords
Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0140953
Abstract: We investigate the low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors (FeTFTs) with a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure. MFMIS FeTFTs are fabricated with different metal-to-FE area ratios (AM/AF's). It is revealed that the noise generation… read more here.
Keywords: gallium zinc; noise characteristics; low frequency; frequency noise ... See more keywords
Simulation of the effect of deep defects created by hydrogen on the performance of amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT)
Sign Up to like & getrecommendations! Published in 2019 at "Materials Research Express"
DOI: 10.1088/2053-1591/ab11a5
Abstract: Amorphous indium gallium zinc oxide (a-IGZO) are promising for developing thin film transistors (TFTs) because of their large electron mobility, small threshold voltage (Vth), and low temperature fabrication process. In this study, we have investigated… read more here.
Keywords: amorphous indium; indium gallium; thin film; effect ... See more keywords
Extracting the Critical Breakdown Electrical Field of Amorphous Indium-Gallium-Zinc-Oxide From the Avalanche Breakdown of n-Indium-Gallium-Zinc-Oxide/p+-Nickel-Oxide Heterojunction Diode
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.2996242
Abstract: A heterojunction diode between n-type amorphous indium-gallium-zinc-oxide (a-IGZO) and p-type nickel oxide is experimentally demonstrated with self-aligned junction termination. The diode has an abrupt, non-destructive breakdown behavior, and the avalanche breakdown is confirmed by the… read more here.
Keywords: indium gallium; gallium zinc; zinc oxide;
Drain-Bias Transient Instability of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3012945
Abstract: High-voltage amorphous indium–gallium–zinc oxide thin-film transistors can be monolithically integrated into the system-on-chip platform as input–output bridges. However, a transient instability showing substantial ON-current degradation under high drain bias is discovered. This drain-bias transient instability… read more here.
Keywords: amorphous indium; instability; drain bias; indium gallium ... See more keywords
Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2021.3113893
Abstract: We report high-performance amorphous Indium-Gallium-Zinc-Oxide nanowire field-effect transistors (α -IGZO NW-FETs) featuring an ultrascaled nanowire width ( $W_{NW}$ ) down to ~20 nm. The device with 100 nm channel length ( $L_{CH}$ ) and ~25… read more here.
Keywords: gallium zinc; oxide igzo; indium gallium; zinc oxide ... See more keywords