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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.044
Abstract: Abstract We study the incorporation processes of indium into group-III nitride layers under pulsed and continuous growth conditions by in-situ reflection measurements. We want to clarify which processes limit the incorporation of indium and lead…
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Keywords:
ingan role;
incorporation ingan;
incorporation;
indium incorporation ... See more keywords
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Published in 2019 at "Materials"
DOI: 10.3390/ma12162583
Abstract: InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and…
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Keywords:
indium incorporation;
ingan quantum;
quantum wells;
wells grown ... See more keywords