Thermoelectric properties of phosphorus-doped indium tellurosilicate: InSiTe 3
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DOI: 10.1016/j.jallcom.2017.11.093
Abstract: Abstract Polycrystalline samples of undoped and doped indium tellurosilicate: InSiTe3 were synthesized and their thermoelectric (TE) properties were investigated in the temperature range from 323 to 723 K. Phosphorus (P) was selected as an electron dopant,… read more here.
Keywords: doped indium; properties phosphorus; indium tellurosilicate; thermoelectric properties ... See more keywords