Single-electron tunneling through an individual arsenic dopant in silicon.
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale"
DOI: 10.1039/c6nr07258e
Abstract: We report the single-electron tunneling behaviour of a silicon nanobridge where the effective island is a single As dopant atom. The device is a gated silicon nanobridge with a thickness and width of ∼20 nm,… read more here.
Keywords: individual arsenic; single electron; dopant; silicon ... See more keywords