Charge-Noise-Induced Dephasing in Silicon Hole-Spin Qubits.
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DOI: 10.1103/physrevlett.129.247701
Abstract: We investigate, theoretically, charge-noise-induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find… read more here.
Keywords: charge noise; noise induced; hole spin; induced dephasing ... See more keywords