Bend-Induced Ferroelectric Domain Walls in α-In2Se3.
Sign Up to like & getrecommendations! Published in 2023 at "ACS nano"
DOI: 10.1021/acsnano.3c01311
Abstract: The low bending stiffness of atomic membranes from van der Waals ferroelectrics such as α-In2Se3 allow access to a regime of strong coupling between electrical polarization and mechanical deformation at extremely high strain gradients and… read more here.
Keywords: ferroelectric domain; microscopy; domain walls; induced ferroelectric ... See more keywords
Graphene bandgap induced by ferroelectric HfO2 doped with Zr (HfZrO).
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab814b
Abstract: e show experimentally that the ferroelectric HfZrO induces a bandgap of 0.18 eV in graphene monolayer. The experiments are performed on top-gate graphene/HfZrO transistors showing a very high transconductance of 1 mS and very carrier… read more here.
Keywords: bandgap induced; ferroelectric hfo2; graphene bandgap; hfzro ... See more keywords