Modeling of Induced Gate Thermal Noise Including Back-Bias Effect in FDSOI MOSFET
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DOI: 10.1109/lmwc.2018.2834507
Abstract: We present a charge-based compact model for induced gate thermal noise for a fully depleted silicon-on-insulator transistor. The model uses front- and back-gate charges as well as the respective mobilities for the development of analytical… read more here.
Keywords: thermal noise; induced gate; gate thermal; model ... See more keywords